Process Development for the Fabrication of Semiconductor Devices and Circuits Using Spin-On Dopant

نویسندگان

  • Richard R. Ryan
  • Richard Robert Ryan
  • Kathryn Hausbeck
چکیده

....................................................................................................................................................... iii List of Tables ............................................................................................................................................... vi List of Figures ............................................................................................................................................. vii Chapter 1: Introduction ................................................................................................................................. 1 Section 1.1: Semiconductor Prototyping: ................................................................................................. 1 Section 1.2: Photolithography Masks: ...................................................................................................... 3 Section 1.3: Education: ............................................................................................................................. 3 Chapter 2: Background ................................................................................................................................. 6 Chapter 3: Experimental Design ................................................................................................................. 12 Section 3.1: Proof of Concept Experiment ............................................................................................. 12 Section 3.2: Mask Design and Fabrication ............................................................................................. 15 Section 3.3: Contact Comparison............................................................................................................ 19 Section 3.4: Diffusion Profile Variation ................................................................................................. 23 Section 3.5: Process Variation ................................................................................................................ 24 Chapter 4: Results and Analysis ................................................................................................................. 27 Section 4.1: Proof of Concept Analysis .................................................................................................. 27 Section 4.2: Contact Comparison............................................................................................................ 31 Section 4.3: Diffusion Profile Variation ................................................................................................. 34 Section 4.4: Process Variation ................................................................................................................ 38 Chapter 5: Conclusion ................................................................................................................................. 44

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Behavioral Modeling and Simulation of Semiconductor Devices and Circuits Using VHDL-AMS

During the past few years, a lot of work has been done on behavioral models and simulation tools. But a need for modeling strategy still remains. The VHDL-AMS language supports the description of analog electronic circuits using Ordinary Differential Algebraic Equations (ODAEs), in addition to its support for describing discrete-event systems. For VHDL-AMS to be useful to the analog design ...

متن کامل

Device and circuit level suppression techniques for random-dopant-induced static noise margin fluctuation in 16-nm-gate SRAM cell

In this study, a three-dimensional ''atomistic " coupled device-circuit simulation is performed to explore the impact of process-variation-effect (PVE) and random-dopant-fluctuation (RDF) on static noise margin (SNM) of 16-nm complementary metal–oxide–semiconductor (CMOS) static random access memory (SRAM) cells. Fluctuation suppression approaches, based on circuit and device viewpoints, are fu...

متن کامل

Power Supply and Current Modulation Circuits for Semiconductor Lasers

Design and construction of a stable current supply with protection circuits are described. The reported circuit provides a high-stable and high-level current variable from 0.5-1.2 A with the protect ion circuits to prevent over load current, voltage and off-range temperature operation. A detailed analysis of the circuit parameters is given and the time behaviors of the load voltage/current and ...

متن کامل

A dopant-free organic hole transport material for efficient planar heterojunction perovskite solar cells

We demonstrate efficient planar perovskite solar cells using a dopant-free donor–acceptor (D–A) conjugated small molecule as a hole transport material. The photovoltaic cell reaches a power conversion efficiency (PCE) of 14.9%, which is comparable to or even better than that of the devices using the traditional doped 2,20,7,70-tetrakis(N,N0-di-p-methoxyphenylamine)-9,90-spirobifluorene (spiroOM...

متن کامل

Reliable Low-Cost Fabrication of Low-Loss Al O Er Waveguides With 5.4-dB Optical Gain

A reliable and reproducible deposition process for the fabrication of Al O waveguides with losses as low as 0.1 dB/cm has been developed. The thin films are grown at nm deposition rate and exhibit excellent thickness uniformity within 1% over 50 50 mm area and no detectable OH incorporation. For applications of the Al O films in compact, integrated optical devices, a high-quality channel wavegu...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2017